DFF2N60 - N-Channel MOSFET www.DataSheet4U.com
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate 3. Source 2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F PAK pkg is well suited for charger SMPS and small power inverter application.
Absolute Maximum Ratings
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C)* Continuous Drain Current(@TC = 100°C)* Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor