TIC226M - SILICON TRIACSTIC226 SERIES SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
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8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC226D Repetitive peak off-state voltage (see Note 1) TIC226M TIC226S TIC226N Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) Average gate power dissipation at (or below) 85°C case temperature (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(
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