IRF9540 - 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs IRF9540, RF1S9540SM
Data Sheet July 1999 File Number
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521.
• 19A, 100V • rDS(ON) = 0.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”