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D ata Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349.
• 100kHz Operation At 390V, 22A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC • Low Conduction Loss
PART NUMBER HGT1N40N60A4D PACKAGE SOT-227 BRAND 40N60A4D
JEDEC STYLE SOT-227B